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| New Product SI7998DP Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) Channel-1 Channel-2 30 30 RDS(on) () 0.0093 at VGS = 10 V 0.0124 at VGS = 4.5 V 0.0053 at VGS = 10 V 0.007 at VGS = 4.5 V ID (A)a 25 25 30 30 Qg (Typ.) 8.2 15.3 FEATURES * Halogen-free According to IEC 61249-2-21 * TrenchFET(R) Power MOSFET * PWM Optimized APPLICATIONS * System Power DC/DC PowerPAK SO-8 D1 D2 6.15 mm S1 1 2 5.15 mm G1 S2 3 4 D1 G2 8 7 D1 D2 G1 6 5 D2 G2 Bottom View Ordering Information: SI7998DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 150 C) TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current Source-Drain Current Diode Current TC = 25 C TA = 25 C TC = 25 C Maximum Power Dissipation TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Channel-1 30 20 25a 25a 15 b, c Channel-2 30 20 30a 30a 21b, c 17b, c 80 30a 3.3b, c 40 25 4.0b, c 2.5b, c Unit V 12b, c 60 19 3.0 22 3.6 b, c A 14 b, c W 2.3b, c - 55 to 150 260 C THERMAL RESISTANCE RATINGS Channel-1 Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t 10 s Steady State Symbol RthJA RthJC Typ. 26 4 Max. 35 5.5 Channel-2 Typ. 22 2.2 Max. 31 3.1 Unit C/W Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions for channel 1 and channel 2 is 80 C/W. Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 1 New Product SI7998DP Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 A VGS = 0 V, ID = 250 A ID = 250 A ID = 250 A ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85 C VDS = 30 V, VGS = 0 V, TJ = 85 C On-State Drain Currentb ID(on) VDS 5 V, VGS = 10 V VDS 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 13 A VGS = 4.5 V, ID = 18 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 15 A Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 20 A Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 15 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A f = 1 MHz Ch-1 Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 1100 2000 200 390 90 160 17 32 8.2 15.3 3.2 6.3 2.7 4.7 3.5 3.5 7 7 26 48 13 23 nC pF gfs VDS = 10 V, ID = 15 A VDS = 10 V, ID = 20 A Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 30 30 0.0076 0.0093 0.0044 0.0053 0.0103 0.0124 0.0058 45 71 0.007 S 1.2 1.2 30 30 28 26 - 5.6 -6 2.5 2.5 100 100 1 1 10 10 A A V nA mV/C V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. www.vishay.com 2 Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 New Product SI7998DP Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time a Symbol Test Conditions Ch-1 Channel-1 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 Channel-2 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Channel-1 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 Channel-2 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 IS = 10 A IS = 10 A Ch-1 Ch-2 Ch-1 Ch-2 Channel-1 IF = 10 A, dI/dt = 100 A/s, TJ = 25 C Channel-2 IF = 10 A, dI/dt = 100 A/s, TJ = 25 C Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Min. Typ. 20 26 15 17 22 35 10 13 10 13 10 10 22 32 10 10 Max. 30 40 25 30 35 55 15 20 15 20 15 15 35 50 15 15 13 30 30 80 Unit td(on) tr td(off) tf td(on) tr td(off) tf ns IS ISM VSD trr Qrr ta tb TC = 25 C A 0.8 0.8 20 27 15 22 11 15 9 12 1.2 1.2 30 40 25 35 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 3 New Product SI7998DP Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 20 50 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 V thru 4 V 40 16 12 TC = 25 C 8 30 20 VGS = 3 V 10 4 TC = 125 C 0 0.0 TC = - 55 C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.013 1500 Transfer Characteristics R DS(on) - On-Resistance () 1200 0.011 VGS = 4.5 V C - Capacitance (pF) 900 Ciss 0.009 VGS = 10 V 0.007 600 Coss 300 Crss 0.005 0 10 20 30 40 50 60 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 10 ID = 15 A VGS - Gate-to-Source Voltage (V) 8 VDS = 15 V 6 VDS = 24 V 4 R DS(on) - On-Resistance 1.6 1.8 ID = 15 A Capacitance 1.4 (Normalized) 1.2 1.0 2 0.8 VGS = 4.5 V, 10 V 0 0 3 6 9 12 15 18 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 New Product SI7998DP Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.030 ID = 15 A 0.025 R DS(on) - On-Resistance () I S - Source Current (A) 0.020 TJ = 150 C 10 0.015 TJ = 125 C 0.010 TJ = 25 C 0.005 TJ = 25 C 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.4 2.2 32 2.0 Power (W) ID = 250 A VGS(th) (V) 1.8 1.6 1.4 8 1.2 1.0 - 50 24 40 On-Resistance vs. Gate-to-Source Voltage 16 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* 100 s 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms 1s 10 s TA = 25 C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 DC Single Pulse Power 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 5 New Product SI7998DP Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 25 40 I D - Drain Current (A) 20 30 Power (W) Package Limited 15 20 10 10 5 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 New Product SI7998DP Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 Notes: 2. Per Unit Base = RthJA = 80 C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 7 New Product SI7998DP Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 80 20 VGS = 10 V thru 4 V I D - Drain Current (A) 60 I D - Drain Current (A) 16 TC = - 55 C 12 40 8 TC = 25 C 4 TC = 125 C VGS = 3 V 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.008 2500 Transfer Characteristics Ciss R DS(on) - On-Resistance () 0.007 C - Capacitance (pF) VGS = 4.5 V 0.006 2000 1500 0.005 VGS = 10 V 0.004 1000 Coss 500 Crss 0 5 10 15 20 25 30 0.003 0 20 40 ID - Drain Current (A) 60 80 0 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 20 A VGS - Gate-to-Source Voltage (V) 8 VDS = 15 V 6 VDS = 24 V 4 R DS(on) - On-Resistance 1.6 1.8 ID = 20 A Capacitance (Normalized) 1.4 1.2 1.0 VGS = 4.5 V 2 0.8 VGS = 10 V 0 0 7 14 21 28 35 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 8 Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 New Product SI7998DP Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.020 ID = 20 A R DS(on) - On-Resistance () 0.015 I S - Source Current (A) TJ = 150 C 10 0.010 TJ = 125 C 0.005 TJ = 25 C TJ = 25 C 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.4 2.2 40 2.0 Power (W) VGS(th) (V) ID = 250 A 1.8 1.6 1.4 10 1.2 1.0 - 50 0 0.001 30 50 On-Resistance vs. Gate-to-Source Voltage 20 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (C) Reverse Current vs. Junction Temperature 100 Limited by RDS(on)* 10 I D - Drain Current (A) 100 s Single Pulse Power 1 ms 1 10 ms 100 ms 1s 10 s 0.1 TA = 25 C Single Pulse 0.01 0.01 DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 9 New Product SI7998DP Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 80 50 40 I D - Drain Current (A) I D - Drain Current (A) 60 30 40 Package Limited 20 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature (C) 0 25 50 75 100 125 150 TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 New Product SI7998DP Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 Notes: PDM t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68970. Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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